منابع مشابه
Thermodynamic Study of Al-Ge-Sn Ternary Alloys by E.M.F. Measurements
für Naturforschung in cooperation with the Max Planck Society for the Advancement of Science under a Creative Commons Attribution 4.0 International License. Dieses Werk wurde im Jahr 2013 vom Verlag Zeitschrift für Naturforschung in Zusammenarbeit mit der Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. digitalisiert und unter folgender Lizenz veröffentlicht: Creative Commons Namen...
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Transition metal dichalcogenides (TMDs) are of interest in numerous applications due to their interesting physical properties. Especially, in thin films they are superior to graphene, due to their ability to be functionalised. Incorporation of that thin film properties in the bulk is challenging. One method is the creation of metastable ferecrystals or stable misfit layer compounds (MLCs), whic...
متن کاملSynchronization of Chaotic Fractional-Order Lu-Lu Systems with Active Sliding Mode Control
Synchronization of chaotic and Lu system has been done using the active sliding mode control strategy. Regarding the synchronization task as a control problem, fractional order mathematics is used to express the system and active sliding mode for synchronization. It has been shown that, not only the performance of the proposed method is satisfying with an acceptable level of control signal, but...
متن کاملFabrication and Investigation of Se-Ge Glass-Ceramics in the Presence of Ga and Sn Additives
The Chalcogenide glasses were fabricated by melting and quenching techniques in the Se-Ge system at the presence of 1mol% Ga and 3, 5, and 7mol% Sn. Differential Scanning Calorimetry (DSC) analysis was conducted to extract the heat treatment of the samples. Fourier Transform Infrared (FTIR) spectroscopy analysis was also performed in a range of 2-16µm. The Glass samples were heat-treated at 450...
متن کاملGe substitutional defects and the √ 3 × √ 3 ↔ 3 × 3 transition in α - Sn / Ge ( 111 )
The structure and energetics of Ge substitutional defects on the α-Sn/Ge(111) surface are analysed using density functional theory molecular dynamics simulations. An isolated Ge defect induces a very local distortion of the 3 × 3 reconstruction, confined to a significant downwards displacement (−0.31 Å) at the defect site and a modest upward displacement (0.05 Å) of the three Sn nearest neighbo...
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ژورنال
عنوان ژورنال: Фізика і хімія твердого тіла
سال: 2019
ISSN: 2309-8589,1729-4428
DOI: 10.15330/pcss.20.1.76